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monocrystal elastic constants of NbCLEDBETTER, H. M; CHEVACHAROENKUL, S; DAVIS, R. F et al.Journal of applied physics. 1986, Vol 60, Num 5, pp 1614-1617, issn 0021-8979Article

Space group and chemical analysis of Y2BaCuO5•x by convergent beam electron diffraction and x-ray energy-dispersive spectroscopyMANSFIELD, J. F; CHEVACHAROENKUL, S; KINGON, A. I et al.Applied physics letters. 1987, Vol 51, Num 13, pp 1035-1037, issn 0003-6951Article

Steady-state creep behavior of hot isostatically pressed niobium carbideNIXON, R. D; CHEVACHAROENKUL, S; DAVIS, R. F et al.Materials research bulletin. 1987, Vol 22, Num 9, pp 1233-1240, issn 0025-5408Article

Junction formation and poly-Si doping for scaled sub-micron CMOS technologyOSBURN, C. M; CHEVACHAROENKUL, S; MCGUIRE, G. E et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 8, pp 2287-2298, issn 0013-4651Conference Paper

THE SYNTHESIS AND LAYER GROWTH OF ZINC SILICON ARSENIDE, ZNSIAS2, BY CHEMICAL VAPOR DEPOSITION IN AN OPEN FLOW SYSTEM.ANDREWS JE; SCHREINER AF; BENSON RB et al.1977; MATER. RES. BULL.; U.S.A.; DA. 1977; VOL. 12; NO 10; PP. 961-968; BIBL. 5 REF.Article

In situ strain measurements during the formation of palladium silicide filmsBUAUD, P. P; D'HEURLE, F. M; CHEVACHAROENKUL, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 304-310, issn 1071-1023Conference Paper

Spectroscopic differential reflectance as an analytical probe for microelectronic processingBURNS, T. M; IRENE, E. A; CHEVACHAROENKUL, S et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 1, pp 78-85, issn 1071-1023Article

Steady-state creep of hot-pressed SiC whisker-reinforced silicon nitrideNIXON, R. D; KOESTER, D. A; CHEVACHAROENKUL, S et al.Composites science and technology. 1990, Vol 37, Num 1-3, pp 313-328, issn 0266-3538Article

Diamond synthesis in graphite/nickel composite powders subjected to shock compressionSIMONSEN, I; CHEVACHAROENKUL, S; HORIE, Y et al.Journal of materials science. 1989, Vol 24, Num 4, pp 1486-1490, issn 0022-2461Article

Recrystallization of silicon amorphized by carbon implantationCHEVACHAROENKUL, S; IIZHOEFER, J. R; FEIJOO, D et al.Applied physics letters. 1991, Vol 58, Num 13, pp 1434-1436, issn 0003-6951, 3 p.Article

Laser ablation deposition of titanium nitride films on silicon substrates at room temperatureAUCIELLO, O; BARNES, T; CHEVACHAROENKUL, S et al.Thin solid films. 1989, Vol 181, Num 1-2, pp 65-73, issn 0040-6090, 9 p.Conference Paper

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